Use of hexamethyldisiloxane for p-type microcrystalline silicon oxycarbide layers
The use of hexamethyldisiloxane (HMDSO) as an oxygen source for the growth of p-type silicon-based layers deposited by Plasma Enhanced Chemical Vapor Deposition is evaluated.The use of this source led to the incorporation of almost equivalent amounts of oxygen Automotive Accessories and carbon, resulting in microcrystalline silicon oxycarbide thin